CMOS Low-Power Threshold Voltage Monitor Circuits and Applications
نویسنده
چکیده
A threshold voltage (VT0) monitor is a circuit that ideally delivers the estimated VT0 value as a voltage at its output, for a given temperature range, without external biases, parametric setups, curve fitting or any subsequent calculation. It can be used in temperature sensors, voltage and current references, radiation dosimeters and other applications since the MOSFET VT0 dependence on the operation conditions is a very well modeled aspect. Also, it can be used for fabrication process monitoring and process variability compensation, since VT0 is a key parameter for the transistor behavior and modeling. In this thesis, we present three novel circuit topologies, two of them being NMOS VT0 monitors and the last one being a PMOS VT0 monitor. The three structures are resistorless self-biased circuit topologies that present high power supply rejection, low line sensitivity, and allow the direct extraction of the threshold voltage for wide temperature and power supply voltage ranges, with small error. Its design methodology is based on the Unified Current Control Model (UICM), a MOSFET model that is continuous from weak to strong inversion and from triode to saturation regions. The circuits occupy small silicon area, consume just tens of nanoWatts, and can be implemented in any standard digital CMOS process, since they only use MOS transistors (does not need any resistor). The VT0 monitors are used in different applications in order to prove their functionality, and behavior as part of a system. The applications vary from a reference voltage, that presents performance comparable with state-of-the-art works, to a configuration that allows to obtain a lower process variability, in the output of a self-biased circuit that generates a complementary to the absolute temperature (CTAT) voltage. In addition, exploiting the ability to operate as an specific current (ISQ) generator, that the VT0 monitors presented here offer, we introduced a new self-biased circuit that produces a CTAT voltage and is less sensitive to process variations, and can be used in band-gap voltage references.
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